Memristor‐transistor hybrid ternary content addressable memory using ternary memristive memory cell

Memristor‐transistor hybrid ternary content addressable memory using ternary memristive memory cell

Abstract A memristor‐transistor hybrid ternary content addressable memory (MTCAM) with a memristor‐based ternary memory cell is proposed. New emerging devices like memristors have recently been explored to overcome the limitations of CMOS‐based memory circuits. The memristor is used as a binary memo...

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Detalles Bibliográficos
Main Authors: Masoodur Rahman Khan, ABM Harun‐ur Rashid
Formato: Artigo
Idioma:English
Publicado: Wiley 2021-10-01
Series:IET Circuits, Devices and Systems
Subjects:
CMOS memory circuits
content‐addressable storage
integrated circuit design
Monte Carlo methods
memristor circuits
Acceso en liña:https://doi.org/10.1049/cds2.12057

Internet

https://doi.org/10.1049/cds2.12057

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