Memristor‐transistor hybrid ternary content addressable memory using ternary memristive memory cell
Abstract A memristor‐transistor hybrid ternary content addressable memory (MTCAM) with a memristor‐based ternary memory cell is proposed. New emerging devices like memristors have recently been explored to overcome the limitations of CMOS‐based memory circuits. The memristor is used as a binary memo...
Main Authors: | Masoodur Rahman Khan, ABM Harun‐ur Rashid |
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Format: | Article |
Language: | English |
Published: |
Wiley
2021-10-01
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Series: | IET Circuits, Devices and Systems |
Subjects: | |
Online Access: | https://doi.org/10.1049/cds2.12057 |
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