O<sub>2</sub> Plasma Alternately Treated ALD-Al<sub>2</sub>O<sub>3</sub> as Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs

O<sub>2</sub> Plasma Alternately Treated ALD-Al<sub>2</sub>O<sub>3</sub> as Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs

This article systematically studies the AlGaN/GaN MIS-HEMTs using the O2 plasma alternately treated Al2O3 as gate dielectric. The X-ray photoelectron spectroscopy (XPS) analyses and capacitance-voltage (C-V) measurement results show that the density of the border traps originating from the Al-OH bon...

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Bibliographic Details
Main Authors: Qiang Wang, Maolin Pan, Penghao Zhang, Luyu Wang, Yannan Yang, Xinling Xie, Hai Huang, Xin Hu, Min Xu
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Access
Subjects:
AlGaN/GaN MIS-HEMTs
border traps
current collapse
plasma alternately treated gate dielectric
Online Access:https://ieeexplore.ieee.org/document/10375390/

Internet

https://ieeexplore.ieee.org/document/10375390/

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