Electrical control of transient formation of electron-hole coexisting system at silicon metal-oxide-semiconductor interfaces
Abstract Recent observations of macroscopic quantum condensation using electron-hole (e-h) bilayers have activated the research of its application to electronics. However, to the best of our knowledge, no attempts have been made to observe the condensation in silicon, the major material in electroni...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2023-10-01
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| Series: | Communications Physics |
| Online Access: | https://doi.org/10.1038/s42005-023-01428-1 |