Measurement and Analysis of Temperature-Dependent Optical Modal Gain in Single-Layer InAs/InP(100) Quantum-Dot Amplifiers in the 1.6- to 1.8-<formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex> </formula> Wavelength Range

Measurement and Analysis of Temperature-Dependent Optical Modal Gain in Single-Layer InAs/InP(100) Quantum-Dot Amplifiers in the 1.6- to 1.8-<formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex> </formula> Wavelength Range

In this paper, measurements and analysis of the small-signal net modal gain of single-layer InAs/InP(100) quantum-dot (QD) optical amplifiers are presented. The amplifiers use only a single layer of InAs QDs on top of a thin InAs quantum well. The devices have been fabricated using a layer stack tha...

Full description

Bibliographic Details
Main Authors: Y. Jiao, P. J. van Veldhoven, E. Smalbrugge, M. K. Smit, S. He, E. A. J. M. Bente
Format: Article
Language:English
Published: IEEE 2012-01-01
Series:IEEE Photonics Journal
Subjects:
Quantum dot (QD)
semiconductor optical amplifier (SOA)
optical gain
rate-equation (RE) model
Online Access:https://ieeexplore.ieee.org/document/6365730/

Internet

https://ieeexplore.ieee.org/document/6365730/

Similar Items