Measurement and Analysis of Temperature-Dependent Optical Modal Gain in Single-Layer InAs/InP(100) Quantum-Dot Amplifiers in the 1.6- to 1.8-<formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex> </formula> Wavelength Range
In this paper, measurements and analysis of the small-signal net modal gain of single-layer InAs/InP(100) quantum-dot (QD) optical amplifiers are presented. The amplifiers use only a single layer of InAs QDs on top of a thin InAs quantum well. The devices have been fabricated using a layer stack tha...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2012-01-01
|
| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/6365730/ |
| _version_ | 1819120423919419392 |
|---|---|
| author | Y. Jiao P. J. van Veldhoven E. Smalbrugge M. K. Smit S. He E. A. J. M. Bente |
| author_facet | Y. Jiao P. J. van Veldhoven E. Smalbrugge M. K. Smit S. He E. A. J. M. Bente |
| author_sort | Y. Jiao |
| collection | DOAJ |
| description | In this paper, measurements and analysis of the small-signal net modal gain of single-layer InAs/InP(100) quantum-dot (QD) optical amplifiers are presented. The amplifiers use only a single layer of InAs QDs on top of a thin InAs quantum well. The devices have been fabricated using a layer stack that is compatible with active-passive integration scheme, which makes further integration possible. The measurement results show sufficient optical gain in the amplifiers and can thus be used in applications such as lasers for long-wavelength optical coherence tomography and gas detection. The temperature dependence of the modal gain is also characterized. An existing rate-equation model was adapted and has been applied to analyze the measured gain spectra. The current injection efficiency has been introduced in the model to obtain a good fit with the measurement. It is found that only a small portion ( ~ 1.7%) of the injected carriers is actually captured by the QDs. The temperature dependence of several parameters describing the QDs is also discovered. The mechanisms causing the blue shift of peak gain as the current density increases and the temperature changes are analyzed and discussed in detail. |
| first_indexed | 2024-12-22T06:20:26Z |
| format | Article |
| id | doaj.art-050ce0556e48468db79d80374d0ea12c |
| institution | Directory Open Access Journal |
| issn | 1943-0655 |
| language | English |
| last_indexed | 2024-12-22T06:20:26Z |
| publishDate | 2012-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj.art-050ce0556e48468db79d80374d0ea12c2022-12-21T18:35:58ZengIEEEIEEE Photonics Journal1943-06552012-01-01462292230610.1109/JPHOT.2012.22310636365730Measurement and Analysis of Temperature-Dependent Optical Modal Gain in Single-Layer InAs/InP(100) Quantum-Dot Amplifiers in the 1.6- to 1.8-<formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex> </formula> Wavelength RangeY. Jiao0P. J. van Veldhoven1E. Smalbrugge2M. K. Smit3S. He4E. A. J. M. Bente5<formula formulatype="inline"><tex Notation="TeX">$^{1}$</tex></formula>COBRA Research Institute, Eindhoven University of Technology, Eindhoven, The Netherlands<formula formulatype="inline"><tex Notation="TeX">$^{1}$</tex></formula> COBRA Research Institute, Eindhoven University of Technology, Eindhoven, the Netherlands<formula formulatype="inline"><tex Notation="TeX">$^{1}$</tex></formula>COBRA Research Institute, Eindhoven University of Technology, Eindhoven, the Netherlands<formula formulatype="inline"><tex Notation="TeX">$^{1}$</tex></formula>COBRA Research Institute, Eindhoven University of Technology, Eindhoven, the Netherlands<formula formulatype="inline"><tex Notation="TeX">$^{2}$</tex></formula>Centre for Optical and Electromagnetic Research, Zhejiang University, Hangzhou, China<formula formulatype="inline"><tex Notation="TeX">$^{1}$</tex></formula>COBRA Research Institute, Eindhoven University of Technology, Eindhoven, the NetherlandsIn this paper, measurements and analysis of the small-signal net modal gain of single-layer InAs/InP(100) quantum-dot (QD) optical amplifiers are presented. The amplifiers use only a single layer of InAs QDs on top of a thin InAs quantum well. The devices have been fabricated using a layer stack that is compatible with active-passive integration scheme, which makes further integration possible. The measurement results show sufficient optical gain in the amplifiers and can thus be used in applications such as lasers for long-wavelength optical coherence tomography and gas detection. The temperature dependence of the modal gain is also characterized. An existing rate-equation model was adapted and has been applied to analyze the measured gain spectra. The current injection efficiency has been introduced in the model to obtain a good fit with the measurement. It is found that only a small portion ( ~ 1.7%) of the injected carriers is actually captured by the QDs. The temperature dependence of several parameters describing the QDs is also discovered. The mechanisms causing the blue shift of peak gain as the current density increases and the temperature changes are analyzed and discussed in detail.https://ieeexplore.ieee.org/document/6365730/Quantum dot (QD)semiconductor optical amplifier (SOA)optical gainrate-equation (RE) model |
| spellingShingle | Y. Jiao P. J. van Veldhoven E. Smalbrugge M. K. Smit S. He E. A. J. M. Bente Measurement and Analysis of Temperature-Dependent Optical Modal Gain in Single-Layer InAs/InP(100) Quantum-Dot Amplifiers in the 1.6- to 1.8-<formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex> </formula> Wavelength Range IEEE Photonics Journal Quantum dot (QD) semiconductor optical amplifier (SOA) optical gain rate-equation (RE) model |
| title | Measurement and Analysis of Temperature-Dependent Optical Modal Gain in Single-Layer InAs/InP(100) Quantum-Dot Amplifiers in the 1.6- to 1.8-<formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex> </formula> Wavelength Range |
| title_full | Measurement and Analysis of Temperature-Dependent Optical Modal Gain in Single-Layer InAs/InP(100) Quantum-Dot Amplifiers in the 1.6- to 1.8-<formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex> </formula> Wavelength Range |
| title_fullStr | Measurement and Analysis of Temperature-Dependent Optical Modal Gain in Single-Layer InAs/InP(100) Quantum-Dot Amplifiers in the 1.6- to 1.8-<formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex> </formula> Wavelength Range |
| title_full_unstemmed | Measurement and Analysis of Temperature-Dependent Optical Modal Gain in Single-Layer InAs/InP(100) Quantum-Dot Amplifiers in the 1.6- to 1.8-<formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex> </formula> Wavelength Range |
| title_short | Measurement and Analysis of Temperature-Dependent Optical Modal Gain in Single-Layer InAs/InP(100) Quantum-Dot Amplifiers in the 1.6- to 1.8-<formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex> </formula> Wavelength Range |
| title_sort | measurement and analysis of temperature dependent optical modal gain in single layer inas inp 100 quantum dot amplifiers in the 1 6 to 1 8 formula formulatype inline tex notation tex mu hbox m tex formula wavelength range |
| topic | Quantum dot (QD) semiconductor optical amplifier (SOA) optical gain rate-equation (RE) model |
| url | https://ieeexplore.ieee.org/document/6365730/ |
| work_keys_str_mv | AT yjiao measurementandanalysisoftemperaturedependentopticalmodalgaininsinglelayerinasinp100quantumdotamplifiersinthe16to18formulaformulatypeinlinetexnotationtexmuhboxmtexformulawavelengthrange AT pjvanveldhoven measurementandanalysisoftemperaturedependentopticalmodalgaininsinglelayerinasinp100quantumdotamplifiersinthe16to18formulaformulatypeinlinetexnotationtexmuhboxmtexformulawavelengthrange AT esmalbrugge measurementandanalysisoftemperaturedependentopticalmodalgaininsinglelayerinasinp100quantumdotamplifiersinthe16to18formulaformulatypeinlinetexnotationtexmuhboxmtexformulawavelengthrange AT mksmit measurementandanalysisoftemperaturedependentopticalmodalgaininsinglelayerinasinp100quantumdotamplifiersinthe16to18formulaformulatypeinlinetexnotationtexmuhboxmtexformulawavelengthrange AT she measurementandanalysisoftemperaturedependentopticalmodalgaininsinglelayerinasinp100quantumdotamplifiersinthe16to18formulaformulatypeinlinetexnotationtexmuhboxmtexformulawavelengthrange AT eajmbente measurementandanalysisoftemperaturedependentopticalmodalgaininsinglelayerinasinp100quantumdotamplifiersinthe16to18formulaformulatypeinlinetexnotationtexmuhboxmtexformulawavelengthrange |