$Measurement and Analysis of Temperature-Dependent Optical Modal Gain in Single-Layer InAs/InP(100) Quantum-Dot Amplifiers in the 1.6- to 1.8-<formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex> </formula> Wavelength Range$

Measurement and Analysis of Temperature-Dependent Optical Modal Gain in Single-Layer InAs/InP(100) Quantum-Dot Amplifiers in the 1.6- to 1.8-<formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex> </formula> Wavelength Range

In this paper, measurements and analysis of the small-signal net modal gain of single-layer InAs/InP(100) quantum-dot (QD) optical amplifiers are presented. The amplifiers use only a single layer of InAs QDs on top of a thin InAs quantum well. The devices have been fabricated using a layer stack tha...

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Bibliographic Details
Main Authors:	Y. Jiao, P. J. van Veldhoven, E. Smalbrugge, M. K. Smit, S. He, E. A. J. M. Bente
Format:	Article
Language:	English
Published:	IEEE 2012-01-01
Series:	IEEE Photonics Journal
Subjects:	Quantum dot (QD) semiconductor optical amplifier (SOA) optical gain rate-equation (RE) model
Online Access:	https://ieeexplore.ieee.org/document/6365730/

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