Resistive switching properties for fluorine doped titania fabricated using atomic layer deposition
This study demonstrates a new resistive switching material, F-doped TiO2 (F:TiO2), fabricated by atomic layer deposition (ALD) with an in-house fluorine source for resistive random access memory (RRAM) devices. Controlling oxygen vacancies is required since RRAM uses resistive switching (RS) charact...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-03-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0076669 |