$Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar (${11\overline{2}2}$) and Non-Polar (${11\overline{2}0}$) GaN Nanorods$

Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar (${11\overline{2}2}$) and Non-Polar (${11\overline{2}0}$) GaN Nanorods

The formation of gallium nitride (GaN) semi-polar and non-polar nanostructures is of importance for improving light extraction/absorption of optoelectronic devices, creating optical resonant cavities or reducing the defect density. However, very limited studies of nanotexturing via dry etching have...

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Bibliographic Details
Main Authors:	Pierre-Marie Coulon, Peng Feng, Tao Wang, Philip A. Shields
Format:	Article
Language:	English
Published:	MDPI AG 2020-12-01
Series:	Nanomaterials
Subjects:	GaN inductively coupled plasma dry etching nanostructures morphology light emitting devices
Online Access:	https://www.mdpi.com/2079-4991/10/12/2562

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https://www.mdpi.com/2079-4991/10/12/2562

Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar (\({11\overline{2}2}\)) and Non-Polar (\({11\overline{2}0}\)) GaN Nanorods

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