A Low Noise Amplifier with 27 dB Gain and 1.78 dB Noise for Satellite Communications with 0.1 µm GaAs pHEMT Technology

A Low Noise Amplifier with 27 dB Gain and 1.78 dB Noise for Satellite Communications with 0.1 µm GaAs pHEMT Technology

This paper proposes a design of a 38 GHz Low Noise Amplifier (LNA) that uses a three-stage common source inductive degeneration topology with a gain of 27 dB and noise figure of 1.78 dB using 0.1 µm GaAs pHEMT as an active device. The novelty of the design is the usage of inductive load in series wi...

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Bibliographic Details
Main Authors: Lakshmi Balla, Venkata Krishna Sharma Gollakota
Format: Article
Language:English
Published: D. G. Pylarinos 2023-10-01
Series:Engineering, Technology & Applied Science Research
Subjects:
gallium arsenide (GaAs)
inductive source degeneration
common source topology
pseudomorphic high electron mobility transistor (pHEMT)
low noise amplifier
radio frequency (RF)
Online Access:http://www.etasr.com/index.php/ETASR/article/view/6264

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http://www.etasr.com/index.php/ETASR/article/view/6264

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