A Low Noise Amplifier with 27 dB Gain and 1.78 dB Noise for Satellite Communications with 0.1 µm GaAs pHEMT Technology
This paper proposes a design of a 38 GHz Low Noise Amplifier (LNA) that uses a three-stage common source inductive degeneration topology with a gain of 27 dB and noise figure of 1.78 dB using 0.1 µm GaAs pHEMT as an active device. The novelty of the design is the usage of inductive load in series wi...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
D. G. Pylarinos
2023-10-01
|
| Series: | Engineering, Technology & Applied Science Research |
| Subjects: | |
| Online Access: | http://www.etasr.com/index.php/ETASR/article/view/6264 |