Determination of Schottky barrier height of graphene electrode on AlGaN/GaN heterostructure
A graphene Schottky contact was fabricated on an AlGaN/GaN heterostructure and subsequently analyzed. The calculated and experimentally measured Schottky barrier heights (SBHs) determined using the theoretical Schottky–Mott model, the thermionic emission model, the temperature-dependent current–volt...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0043981 |