CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor

CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor

Abstract The development of high-performance oxide-based transistors is critical to enable very large-scale integration (VLSI) of monolithic 3-D integrated circuit (IC) in complementary metal oxide semiconductor (CMOS) backend-of-line (BEOL). Atomic layer deposition (ALD) deposited ZnO is an attract...

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Bibliographic Details
Main Authors: Wenhui Wang, Ke Li, Jun Lan, Mei Shen, Zhongrui Wang, Xuewei Feng, Hongyu Yu, Kai Chen, Jiamin Li, Feichi Zhou, Longyang Lin, Panpan Zhang, Yida Li
Format: Article
Language:English
Published: Nature Portfolio 2023-09-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-023-41868-5

Internet

https://doi.org/10.1038/s41467-023-41868-5

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