SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss

SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss

A novel Silicon-Carbide heterojunction U-MOSFET embedded a P-type pillar buried in the drift layer (BP-TMOS) is proposed and simulated in this study. When functioning in the on state, the merged heterojunction structure will control the parasitic body diode, and the switching loss will decrease. Mor...

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Bibliographic Details
Main Authors: Shenglong Ran, Zhiyong Huang, Shengdong Hu, Han Yang
Format: Article
Language:English
Published: MDPI AG 2022-02-01
Series:Micromachines
Subjects:
SiC MOSFET
assistant depletion
switching loss
gate-drain charge
Online Access:https://www.mdpi.com/2072-666X/13/2/248

Internet

https://www.mdpi.com/2072-666X/13/2/248

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