Gate dielectric layer mitigated device degradation of AlGaN/GaN-based devices under proton irradiation
In this study, the simulations of AlGaN/GaN-based devices, including AlGaN/GaN high electron mobility transistor (HEMT), Al2O3 metal–oxide–semiconductor high electron mobility transistor (MOSHEMT), and SiNx metal–insulator–semiconductor high electron mobility transistor (MISHEMT), were studied to in...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0150381 |