Correction to “Stable Operation of AlGaN/GaN HEMTs for 25 Hours at 400°C in Air”
In the referenced paper <xref ref-type="bibr" rid="ref1">[1]</xref>, the micro-photograph shown in <xref rid="fig1" ref-type="fig">Fig. 1 (b)</xref> is of a representative HEMT. The measured HEMT of the paper has the following dimension...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Online Access: | https://ieeexplore.ieee.org/document/9146765/ |