Effect of proton doping and heat treatment on the structure of single crystal silicon
The quality and structural perfection of single crystal silicon have been studied using double-crystal X-ray diffraction after hydrogen ion implantation and thermal annealing used in a number of semiconductor technologies. The fundamental difference of this approach is the possibility to rapidly obt...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Pensoft Publishers
2019-03-01
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| Series: | Modern Electronic Materials |
| Online Access: | https://moem.pensoft.net/article/46413/download/pdf/ |