Accurate, Efficient and Reliable Small-Signal Modeling Approaches for GaN HEMTs
This article presents accurate, efficient and reliable small-signal model parameter extraction approaches applied to Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). Firstly, a scanning-based systematic model parameter extraction methodology is developed. Then, newly reported Optimiza...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2023-01-01
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Series: | IEEE Access |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/10256192/ |