Accurate, Efficient and Reliable Small-Signal Modeling Approaches for GaN HEMTs

This article presents accurate, efficient and reliable small-signal model parameter extraction approaches applied to Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). Firstly, a scanning-based systematic model parameter extraction methodology is developed. Then, newly reported Optimiza...

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Bibliographic Details
Main Authors: Saddam Husain, Anwar Jarndal, Mohammad Hashmi, Fadhel M. Ghannouchi
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/10256192/