Impact of thermal oxidation on the electrical transport and chemical & electronic structure of the GaN film grown on Si and sapphire substrates

Impact of thermal oxidation on the electrical transport and chemical & electronic structure of the GaN film grown on Si and sapphire substrates

Gallium oxide (Ga2O3) has emerged as a fourth-generation semiconductor for futuristic device requirements. Integration of Ga2O3 with industry-viable gallium nitride (GaN) can provide a pathway to design efficient device technology. In this paper, we design Ga2O3/GaN heterointerface by using a simple...

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Bibliographic Details
Main Authors: Shubhendra Kumar Jain, Pratibha Goel, Urvashi Varshney, Tushar Garg, Neha Aggarwal, Shibin Krishna, Sandeep Singh, Govind Gupta
Format: Article
Language:English
Published: Elsevier 2021-09-01
Series:Applied Surface Science Advances
Subjects:
Ga2O3
GaN
Thermal oxidation
Chemical and electronic structure
Electrical transport
Online Access:http://www.sciencedirect.com/science/article/pii/S2666523921000520

Internet

http://www.sciencedirect.com/science/article/pii/S2666523921000520

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