The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La films

The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La films

HfxZr1-xO2 and lanthanum-doped HfxZr1-xO2:La thin films are candidates for applications in ferroelectric random-access memory. Here, we explore the atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La thin films grown by atomic layer deposition. Using X-ray photoelectron spectroscopy,...

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Detalhes bibliográficos
Principais autores: Timofey V. Perevalov, Igor P. Prosvirin, Evgenii A. Suprun, Furqan Mehmood, Thomas Mikolajick, Uwe Schroeder, Vladimir A. Gritsenko
Formato: Artigo
Idioma:English
Publicado em: Elsevier 2021-12-01
coleção:Journal of Science: Advanced Materials and Devices
Assuntos:
FeRAM
XPS
Oxygen vacancy
Electronic structure
HfZrO
Acesso em linha:http://www.sciencedirect.com/science/article/pii/S2468217921000642

Internet

http://www.sciencedirect.com/science/article/pii/S2468217921000642

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