On the Challenges of Reliable Threshold Voltage Measurement in Ohmic and Schottky Gate p-GaN HEMTs
For large scale testability of p-GaN HEMTs it is essential to investigate threshold voltage (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ th}}$ </tex-math></inline-formula>) instability from the perspective of the measurement induced instability....
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9534781/ |