Chemical metrology on latent resist images

Chemical metrology on latent resist images

Patterning photoresist with extreme control over dose and placement is the first crucial step in semiconductor manufacturing. However, how can the activation of modern complex resist components be accurately measured at sufficient spatial resolution? No exposed nanometre-scale resist pattern is suff...

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Bibliographic Details
Main Authors: Maarten van Es, Selman Tamer, Elin Bloem, Laurent Fillinger, Elfi van Zeijl, Klára Maturová, Jacques van der Donck, Rob Willekers, Adam Chuang, Diederik Maas
Format: Article
Language:English
Published: Elsevier 2023-06-01
Series:Micro and Nano Engineering
Subjects:
Scanning probe microscopy
IR-AFM
Latent image
Metrology
Resist
Online Access:http://www.sciencedirect.com/science/article/pii/S2590007223000114

Internet

http://www.sciencedirect.com/science/article/pii/S2590007223000114

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