Chemical metrology on latent resist images
Patterning photoresist with extreme control over dose and placement is the first crucial step in semiconductor manufacturing. However, how can the activation of modern complex resist components be accurately measured at sufficient spatial resolution? No exposed nanometre-scale resist pattern is suff...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-06-01
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| Series: | Micro and Nano Engineering |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590007223000114 |
| _version_ | 1797798644956528640 |
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| author | Maarten van Es Selman Tamer Elin Bloem Laurent Fillinger Elfi van Zeijl Klára Maturová Jacques van der Donck Rob Willekers Adam Chuang Diederik Maas |
| author_facet | Maarten van Es Selman Tamer Elin Bloem Laurent Fillinger Elfi van Zeijl Klára Maturová Jacques van der Donck Rob Willekers Adam Chuang Diederik Maas |
| author_sort | Maarten van Es |
| collection | DOAJ |
| description | Patterning photoresist with extreme control over dose and placement is the first crucial step in semiconductor manufacturing. However, how can the activation of modern complex resist components be accurately measured at sufficient spatial resolution? No exposed nanometre-scale resist pattern is sufficiently sturdy to unalteredly withstand inspection by intense photon or electron beams, not even after processing and development.This paper presents experimental proof that infrared atomic force microscopy (IR-AFM) is sufficiently sensitive and gentle to chemically record vulnerable yet valuable lithographic patterns in a chemically amplified resist after exposure prior to development. Accordingly, IR-AFM metrology provides long-sought insights into changes in the chemical and spatial distribution per component in a latent resist image, both directly after exposure and during processing. With these to-be-gained understandings, a disruptive acceleration of resist design and processing is expected. |
| first_indexed | 2024-03-13T04:07:58Z |
| format | Article |
| id | doaj.art-0653850e95f944f287663f12ba7a92af |
| institution | Directory Open Access Journal |
| issn | 2590-0072 |
| language | English |
| last_indexed | 2024-03-13T04:07:58Z |
| publishDate | 2023-06-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Micro and Nano Engineering |
| spelling | doaj.art-0653850e95f944f287663f12ba7a92af2023-06-21T06:58:52ZengElsevierMicro and Nano Engineering2590-00722023-06-0119100181Chemical metrology on latent resist imagesMaarten van Es0Selman Tamer1Elin Bloem2Laurent Fillinger3Elfi van Zeijl4Klára Maturová5Jacques van der Donck6Rob Willekers7Adam Chuang8Diederik Maas9Corresponding author.; Netherlands Organisation for Applied Scientific Research (TNO), Delft, NetherlandsNetherlands Organisation for Applied Scientific Research (TNO), Delft, NetherlandsNetherlands Organisation for Applied Scientific Research (TNO), Delft, NetherlandsNetherlands Organisation for Applied Scientific Research (TNO), Delft, NetherlandsNetherlands Organisation for Applied Scientific Research (TNO), Delft, NetherlandsNetherlands Organisation for Applied Scientific Research (TNO), Delft, NetherlandsNetherlands Organisation for Applied Scientific Research (TNO), Delft, NetherlandsNetherlands Organisation for Applied Scientific Research (TNO), Delft, NetherlandsNetherlands Organisation for Applied Scientific Research (TNO), Delft, NetherlandsNetherlands Organisation for Applied Scientific Research (TNO), Delft, NetherlandsPatterning photoresist with extreme control over dose and placement is the first crucial step in semiconductor manufacturing. However, how can the activation of modern complex resist components be accurately measured at sufficient spatial resolution? No exposed nanometre-scale resist pattern is sufficiently sturdy to unalteredly withstand inspection by intense photon or electron beams, not even after processing and development.This paper presents experimental proof that infrared atomic force microscopy (IR-AFM) is sufficiently sensitive and gentle to chemically record vulnerable yet valuable lithographic patterns in a chemically amplified resist after exposure prior to development. Accordingly, IR-AFM metrology provides long-sought insights into changes in the chemical and spatial distribution per component in a latent resist image, both directly after exposure and during processing. With these to-be-gained understandings, a disruptive acceleration of resist design and processing is expected.http://www.sciencedirect.com/science/article/pii/S2590007223000114Scanning probe microscopyIR-AFMLatent imageMetrologyResist |
| spellingShingle | Maarten van Es Selman Tamer Elin Bloem Laurent Fillinger Elfi van Zeijl Klára Maturová Jacques van der Donck Rob Willekers Adam Chuang Diederik Maas Chemical metrology on latent resist images Micro and Nano Engineering Scanning probe microscopy IR-AFM Latent image Metrology Resist |
| title | Chemical metrology on latent resist images |
| title_full | Chemical metrology on latent resist images |
| title_fullStr | Chemical metrology on latent resist images |
| title_full_unstemmed | Chemical metrology on latent resist images |
| title_short | Chemical metrology on latent resist images |
| title_sort | chemical metrology on latent resist images |
| topic | Scanning probe microscopy IR-AFM Latent image Metrology Resist |
| url | http://www.sciencedirect.com/science/article/pii/S2590007223000114 |
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