Tri-gate junctionless transistors with electrostatically highly doped channel
Multiple-gated junctionless transistors (JLTs) with an extremely simple structure and bulk-conduction-based operation could overcome fundamental problems with respect to short-channel effects for sub-3-nm technology nodes. In this paper, the performance of a tri-gate JLT with an electrostatically hi...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2023-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0174553 |