A 25.1 dBm 25.9-dB Gain 25.4% PAE X-band Power Amplifier Utilizing Voltage Combining Transformer in 65-nm CMOS

A 25.1 dBm 25.9-dB Gain 25.4% PAE X-band Power Amplifier Utilizing Voltage Combining Transformer in 65-nm CMOS

We present an X-band two-stage power amplifier (PA) in 65-nm CMOS process using a transformer (TF)-based voltage combining technique (VTC) which achieves the highest figure of merit (FOM) among recently reported CMOS PAs. The PA architecture is constructed with two-stage push-pull amplifiers with a...

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Bibliographic Details
Main Authors: Van-Son Trinh, Jung-Dong Park
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Access
Subjects:
CMOS integrated circuits
power amplifier
transformer
X-band
Online Access:https://ieeexplore.ieee.org/document/9312190/

Internet

https://ieeexplore.ieee.org/document/9312190/

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