The chemical capacitance as a fingerprint of defect chemistry in mixed conducting oxides

The oxygen stoichiometry of mixed conducting oxides depends on the oxygen chemical potential and thus on the oxygen partial pressure in the gas phase. Also voltages may change the local oxygen stoichiometry and the amount to which such changes take place is quantified by the chemical capacitance of...

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Bibliographic Details
Main Authors: Alexander Schmid, Ghislain M Rupp, Christoph Slouka, Edvinas Navickas, Lukas Andrejs, Herbert Hutter, Lukas Volgger, Andreas Nenning, Juergen Fleig
Format: Article
Language:English
Published: Slovenian Chemical Society 2016-05-01
Series:Acta Chimica Slovenica
Subjects:
Online Access:https://journals.matheo.si/index.php/ACSi/article/view/2302