Analytical modeling of transport phenomena in heterojunction triple metal gate all around tunneling field effect transistor
An analytical model for the transport phenomena of a heterojunction triple metal gate all around tunneling field effect transistor (HTM GAA TFET) is developed for the first time in this paper. The continuous surface potential profile of the staggered-gap aligned heterojunction device is achieved by...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0024864 |