A Continuous Compact DC Model for Dual-Independent-Gate FinFETs

A Continuous Compact DC Model for Dual-Independent-Gate FinFETs

Multiple-independent-gate (MIG) silicon FinFETs were recently shown capable of enabling: 1) device-level polarity control; 2) dynamic threshold modulation; and 3) subthreshold slope tuning down to ultra-steep-slope operation. These operation mechanisms can unlock a myriad of opportunities in digital...

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Bibliographic Details
Main Authors: Mehdi Hasan, Pierre-Emmanuel Gaillardon, Berardi Sensale-Rodriguez
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Compact model
FinFET
Schottky barrier
steep subthreshold slope
impact ionization
feedback
Online Access:https://ieeexplore.ieee.org/document/7756412/

Internet

https://ieeexplore.ieee.org/document/7756412/

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