A Continuous Compact DC Model for Dual-Independent-Gate FinFETs
Multiple-independent-gate (MIG) silicon FinFETs were recently shown capable of enabling: 1) device-level polarity control; 2) dynamic threshold modulation; and 3) subthreshold slope tuning down to ultra-steep-slope operation. These operation mechanisms can unlock a myriad of opportunities in digital...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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IEEE
2017-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7756412/ |
| _version_ | 1818331527253065728 |
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| author | Mehdi Hasan Pierre-Emmanuel Gaillardon Berardi Sensale-Rodriguez |
| author_facet | Mehdi Hasan Pierre-Emmanuel Gaillardon Berardi Sensale-Rodriguez |
| author_sort | Mehdi Hasan |
| collection | DOAJ |
| description | Multiple-independent-gate (MIG) silicon FinFETs were recently shown capable of enabling: 1) device-level polarity control; 2) dynamic threshold modulation; and 3) subthreshold slope tuning down to ultra-steep-slope operation. These operation mechanisms can unlock a myriad of opportunities in digital as well as analog design. Here we discuss a continuous compact direct-current (dc) model, capable of describing the current-voltage characteristics of a class of MIG FinFETS, namely dual-independent-gate (DIG) FinFETs, over all its biasing design space. This model captures some of the unique features of DIG FinFETs including the dependence of its super-steep subthreshold swing on drain bias and polarity gate bias. An excellent agreement is shown between the model and measured experimental current-voltage characteristics in these devices. Moreover, the predictive nature of the model is evaluated by foreseeing the perspectives of DIG FinFETs as efficient RF detectors at very high frequencies. |
| first_indexed | 2024-12-13T13:21:16Z |
| format | Article |
| id | doaj.art-06821603339c44929fa847ef5589a88a |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-13T13:21:16Z |
| publishDate | 2017-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-06821603339c44929fa847ef5589a88a2022-12-21T23:44:24ZengIEEEIEEE Journal of the Electron Devices Society2168-67342017-01-0151233110.1109/JEDS.2016.26327097756412A Continuous Compact DC Model for Dual-Independent-Gate FinFETsMehdi Hasan0Pierre-Emmanuel Gaillardon1Berardi Sensale-Rodriguez2https://orcid.org/0000-0001-7404-1743Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT, USADepartment of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT, USADepartment of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT, USAMultiple-independent-gate (MIG) silicon FinFETs were recently shown capable of enabling: 1) device-level polarity control; 2) dynamic threshold modulation; and 3) subthreshold slope tuning down to ultra-steep-slope operation. These operation mechanisms can unlock a myriad of opportunities in digital as well as analog design. Here we discuss a continuous compact direct-current (dc) model, capable of describing the current-voltage characteristics of a class of MIG FinFETS, namely dual-independent-gate (DIG) FinFETs, over all its biasing design space. This model captures some of the unique features of DIG FinFETs including the dependence of its super-steep subthreshold swing on drain bias and polarity gate bias. An excellent agreement is shown between the model and measured experimental current-voltage characteristics in these devices. Moreover, the predictive nature of the model is evaluated by foreseeing the perspectives of DIG FinFETs as efficient RF detectors at very high frequencies.https://ieeexplore.ieee.org/document/7756412/Compact modelFinFETSchottky barriersteep subthreshold slopeimpact ionizationfeedback |
| spellingShingle | Mehdi Hasan Pierre-Emmanuel Gaillardon Berardi Sensale-Rodriguez A Continuous Compact DC Model for Dual-Independent-Gate FinFETs IEEE Journal of the Electron Devices Society Compact model FinFET Schottky barrier steep subthreshold slope impact ionization feedback |
| title | A Continuous Compact DC Model for Dual-Independent-Gate FinFETs |
| title_full | A Continuous Compact DC Model for Dual-Independent-Gate FinFETs |
| title_fullStr | A Continuous Compact DC Model for Dual-Independent-Gate FinFETs |
| title_full_unstemmed | A Continuous Compact DC Model for Dual-Independent-Gate FinFETs |
| title_short | A Continuous Compact DC Model for Dual-Independent-Gate FinFETs |
| title_sort | continuous compact dc model for dual independent gate finfets |
| topic | Compact model FinFET Schottky barrier steep subthreshold slope impact ionization feedback |
| url | https://ieeexplore.ieee.org/document/7756412/ |
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