Pressure‐Induced Formation of Quaternary Compound and In−N Distribution in InGaAsN Zincblende from Ab Initio Calculation
Abstract We present the effects of In−N distribution and high pressure on the zincblende phase (0–5 GPa) of InxGa1−xAs0.963N0.037 (x=0.074, 0.111 and 0.148). Structural, electronic, and optical properties are analyzed, and it is found that non‐isotropic distribution of In−N (type C) possesses the mi...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2019-03-01
|
| Series: | ChemistryOpen |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/open.201900018 |