Residual Oxygen Effects on the Properties of MoS<sub>2</sub> Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Residual Oxygen Effects on the Properties of MoS<sub>2</sub> Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Molybdenum disulfide (MoS<sub>2</sub>) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, o...

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Bibliographic Details
Main Authors: Peiyu Wang, Xin Wang, Fengyin Tan, Ronghua Zhang
Format: Article
Language:English
Published: MDPI AG 2021-09-01
Series:Crystals
Subjects:
molybdenum disulfide thin films
magnetron sputtering
structure
optical properties
electrical properties
Online Access:https://www.mdpi.com/2073-4352/11/10/1183

Internet

https://www.mdpi.com/2073-4352/11/10/1183

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