Residual Oxygen Effects on the Properties of MoS<sub>2</sub> Thin Films Deposited at Different Temperatures by Magnetron Sputtering
Molybdenum disulfide (MoS<sub>2</sub>) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, o...
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MDPI AG
2021-09-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/11/10/1183 |
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| author | Peiyu Wang Xin Wang Fengyin Tan Ronghua Zhang |
| author_facet | Peiyu Wang Xin Wang Fengyin Tan Ronghua Zhang |
| author_sort | Peiyu Wang |
| collection | DOAJ |
| description | Molybdenum disulfide (MoS<sub>2</sub>) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS<sub>2</sub> thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS<sub>2</sub> thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO<sub>3</sub> thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process. |
| first_indexed | 2024-03-10T06:38:10Z |
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| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-10T06:38:10Z |
| publishDate | 2021-09-01 |
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| series | Crystals |
| spelling | doaj.art-06bc868c73664b869d294bacae061f662023-11-22T17:52:55ZengMDPI AGCrystals2073-43522021-09-011110118310.3390/cryst11101183Residual Oxygen Effects on the Properties of MoS<sub>2</sub> Thin Films Deposited at Different Temperatures by Magnetron SputteringPeiyu Wang0Xin Wang1Fengyin Tan2Ronghua Zhang3College of Science, Changchun University of Science and Technology, Changchun 130013, ChinaCollege of Science, Changchun University of Science and Technology, Changchun 130013, ChinaCollege of Science, Changchun University of Science and Technology, Changchun 130013, ChinaCollege of Science, Changchun University of Science and Technology, Changchun 130013, ChinaMolybdenum disulfide (MoS<sub>2</sub>) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS<sub>2</sub> thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS<sub>2</sub> thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO<sub>3</sub> thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.https://www.mdpi.com/2073-4352/11/10/1183molybdenum disulfide thin filmsmagnetron sputteringstructureoptical propertieselectrical properties |
| spellingShingle | Peiyu Wang Xin Wang Fengyin Tan Ronghua Zhang Residual Oxygen Effects on the Properties of MoS<sub>2</sub> Thin Films Deposited at Different Temperatures by Magnetron Sputtering Crystals molybdenum disulfide thin films magnetron sputtering structure optical properties electrical properties |
| title | Residual Oxygen Effects on the Properties of MoS<sub>2</sub> Thin Films Deposited at Different Temperatures by Magnetron Sputtering |
| title_full | Residual Oxygen Effects on the Properties of MoS<sub>2</sub> Thin Films Deposited at Different Temperatures by Magnetron Sputtering |
| title_fullStr | Residual Oxygen Effects on the Properties of MoS<sub>2</sub> Thin Films Deposited at Different Temperatures by Magnetron Sputtering |
| title_full_unstemmed | Residual Oxygen Effects on the Properties of MoS<sub>2</sub> Thin Films Deposited at Different Temperatures by Magnetron Sputtering |
| title_short | Residual Oxygen Effects on the Properties of MoS<sub>2</sub> Thin Films Deposited at Different Temperatures by Magnetron Sputtering |
| title_sort | residual oxygen effects on the properties of mos sub 2 sub thin films deposited at different temperatures by magnetron sputtering |
| topic | molybdenum disulfide thin films magnetron sputtering structure optical properties electrical properties |
| url | https://www.mdpi.com/2073-4352/11/10/1183 |
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