Switching the electrical properties of thin-film memristive elements based on GeTe by sequences of ultrashort laser pulses

Switching the electrical properties of thin-film memristive elements based on GeTe by sequences of ultrashort laser pulses

The work is devoted to the study of the characteristics of the state control of a thin-film element based on a phase-change GeTe material. The properties of such an element have been controlled by the action of sequences of ultrashort laser pulses. This action leads to a rapid heating of the thin...

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Bibliographic Details
Main Authors: Nikolai N. Eliseev, Alexey A. Nevzoro, Vladimir A. Mikhalevsky, Alexey V. Kiselev, Anton A. Burtsev, Vitaliy V. Ionin, Andrey A. Lotin
Format: Article
Language:English
Published: Saint Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO University) 2023-10-01
Series:Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki
Subjects:
phase-change materials
germanium telluride
thin films
neuromorphic elements
phase-change memory
memristors
optoelectronic memristors
Online Access:https://ntv.ifmo.ru/file/article/22362.pdf

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https://ntv.ifmo.ru/file/article/22362.pdf

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