A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques

A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques

This paper presents a highly integrated C-band RF transceiver front-end design consisting of two Single Pole Double Throw (SPDT) transmit/receive (T/R) switches, a Low Noise Amplifier (LNA), and a Power Amplifier (PA) for Ultra-Wideband (UWB) positioning system applications. When fabricated using a...

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Bibliographic Details
Main Authors: Boyang Shan, Haipeng Fu, Jian Wang
Format: Article
Language:English
Published: MDPI AG 2024-01-01
Series:Micromachines
Subjects:
GaAs
SPDT
LNA
C-band
UWB
Online Access:https://www.mdpi.com/2072-666X/15/2/169

Internet

https://www.mdpi.com/2072-666X/15/2/169

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