A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques
This paper presents a highly integrated C-band RF transceiver front-end design consisting of two Single Pole Double Throw (SPDT) transmit/receive (T/R) switches, a Low Noise Amplifier (LNA), and a Power Amplifier (PA) for Ultra-Wideband (UWB) positioning system applications. When fabricated using a...
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| Format: | Article |
| Language: | English |
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MDPI AG
2024-01-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/15/2/169 |
| _version_ | 1797297449800302592 |
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| author | Boyang Shan Haipeng Fu Jian Wang |
| author_facet | Boyang Shan Haipeng Fu Jian Wang |
| author_sort | Boyang Shan |
| collection | DOAJ |
| description | This paper presents a highly integrated C-band RF transceiver front-end design consisting of two Single Pole Double Throw (SPDT) transmit/receive (T/R) switches, a Low Noise Amplifier (LNA), and a Power Amplifier (PA) for Ultra-Wideband (UWB) positioning system applications. When fabricated using a 0.25 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process, the switch is optimized for system isolation and stability using inductive resonance techniques. The transceiver front-end achieves overall bandwidth expansion as well as the flat noise in receive mode using the bandwidth expansion technique. The results show that the front-end modules (FEM) have a typical gain of 22 dB in transmit mode, 18 dB in receive mode, and 2 dB noise in the 4.5–8 GHz band, with a chip area of 1.56 × 1.46 mm<sup>2</sup>. Based on the available literature, it is known that the proposed circuit is the most highly integrated C-band RF transceiver front-end design for UWB applications in the same process. |
| first_indexed | 2024-03-07T22:20:28Z |
| format | Article |
| id | doaj.art-0706bf9a6c674ae486bd47988d35b51b |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-07T22:20:28Z |
| publishDate | 2024-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-0706bf9a6c674ae486bd47988d35b51b2024-02-23T15:27:30ZengMDPI AGMicromachines2072-666X2024-01-0115216910.3390/mi15020169A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion TechniquesBoyang Shan0Haipeng Fu1Jian Wang2School of Microelectronics, Tianjin University, Tianjin 300072, ChinaQingdao Institute for Ocean Technology, Tianjin University, Qingdao 266200, ChinaSchool of Microelectronics, Tianjin University, Tianjin 300072, ChinaThis paper presents a highly integrated C-band RF transceiver front-end design consisting of two Single Pole Double Throw (SPDT) transmit/receive (T/R) switches, a Low Noise Amplifier (LNA), and a Power Amplifier (PA) for Ultra-Wideband (UWB) positioning system applications. When fabricated using a 0.25 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process, the switch is optimized for system isolation and stability using inductive resonance techniques. The transceiver front-end achieves overall bandwidth expansion as well as the flat noise in receive mode using the bandwidth expansion technique. The results show that the front-end modules (FEM) have a typical gain of 22 dB in transmit mode, 18 dB in receive mode, and 2 dB noise in the 4.5–8 GHz band, with a chip area of 1.56 × 1.46 mm<sup>2</sup>. Based on the available literature, it is known that the proposed circuit is the most highly integrated C-band RF transceiver front-end design for UWB applications in the same process.https://www.mdpi.com/2072-666X/15/2/169GaAsSPDTLNAC-bandUWB |
| spellingShingle | Boyang Shan Haipeng Fu Jian Wang A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques Micromachines GaAs SPDT LNA C-band UWB |
| title | A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques |
| title_full | A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques |
| title_fullStr | A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques |
| title_full_unstemmed | A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques |
| title_short | A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques |
| title_sort | highly integrated c band feedback resistor transceiver front end based on inductive resonance and bandwidth expansion techniques |
| topic | GaAs SPDT LNA C-band UWB |
| url | https://www.mdpi.com/2072-666X/15/2/169 |
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