Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam e...

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Bibliographic Details
Main Authors: Aho Arto, Isoaho Riku, Tukiainen Antti, Polojärvi Ville, Raappana Marianna, Aho Timo, Guina Mircea
Format: Article
Language:English
Published: EDP Sciences 2017-01-01
Series:E3S Web of Conferences
Online Access:https://doi.org/10.1051/e3sconf/20171603008

Internet

https://doi.org/10.1051/e3sconf/20171603008

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