Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE
Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam e...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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EDP Sciences
2017-01-01
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| Series: | E3S Web of Conferences |
| Online Access: | https://doi.org/10.1051/e3sconf/20171603008 |
| _version_ | 1818342957567180800 |
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| author | Aho Arto Isoaho Riku Tukiainen Antti Polojärvi Ville Raappana Marianna Aho Timo Guina Mircea |
| author_facet | Aho Arto Isoaho Riku Tukiainen Antti Polojärvi Ville Raappana Marianna Aho Timo Guina Mircea |
| author_sort | Aho Arto |
| collection | DOAJ |
| description | Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was measured at different temperatures. The short circuit current density exhibited a temperature coefficient of 0.006 mA/cm2/°C while the corresponding slope for the open circuit voltage was −6.8 mV/°C. Further efficiency improvement, up to 32%, is projected by better current balancing and structural optimization. |
| first_indexed | 2024-12-13T16:22:57Z |
| format | Article |
| id | doaj.art-0721e5f6b5854f4baa6feddf86051546 |
| institution | Directory Open Access Journal |
| issn | 2267-1242 |
| language | English |
| last_indexed | 2024-12-13T16:22:57Z |
| publishDate | 2017-01-01 |
| publisher | EDP Sciences |
| record_format | Article |
| series | E3S Web of Conferences |
| spelling | doaj.art-0721e5f6b5854f4baa6feddf860515462022-12-21T23:38:40ZengEDP SciencesE3S Web of Conferences2267-12422017-01-01160300810.1051/e3sconf/20171603008e3sconf_espc2017_03008Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBEAho ArtoIsoaho RikuTukiainen AnttiPolojärvi VilleRaappana MariannaAho TimoGuina MirceaDilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was measured at different temperatures. The short circuit current density exhibited a temperature coefficient of 0.006 mA/cm2/°C while the corresponding slope for the open circuit voltage was −6.8 mV/°C. Further efficiency improvement, up to 32%, is projected by better current balancing and structural optimization.https://doi.org/10.1051/e3sconf/20171603008 |
| spellingShingle | Aho Arto Isoaho Riku Tukiainen Antti Polojärvi Ville Raappana Marianna Aho Timo Guina Mircea Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE E3S Web of Conferences |
| title | Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE |
| title_full | Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE |
| title_fullStr | Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE |
| title_full_unstemmed | Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE |
| title_short | Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE |
| title_sort | performace of dilute nitride triple junction space solar cell grown by mbe |
| url | https://doi.org/10.1051/e3sconf/20171603008 |
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