A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide
Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film- and CMOS-compatibility. However, the variety of physical phenomena connected to ferroelectricity allows a wider range of applications for these mat...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4964300 |