Modeling Resonance-Free Modulation Response in Transistor Lasers With Single and Multiple Quantum Wells in the Base
We have developed the expressions for terminal currents in transistor lasers (TLs) having a single quantum well (SQW) as well as multiple quantum wells (MQWs) of different well and barrier widths in the base by solving a continuity equation relating the bulk carrier density with the 2-D carrier dens...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2012-01-01
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Series: | IEEE Photonics Journal |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/6265334/ |