Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using <i>Y<sub>21</sub></i> Frequency Dispersion Properties

Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using <i>Y<sub>21</sub></i> Frequency Dispersion Properties

The buffer and surface trapping effects on low-frequency (LF) <i>Y</i>-parameters of Fe-doped AlGaN/GaN high-electron mobility transistors (HEMTs) are analyzed through experimental and simulation studies. The drain current transient (DCT) characterization is also carried out to complemen...

Full description

Bibliographic Details
Main Authors: P. Vigneshwara Raja, Nandha Kumar Subramani, Florent Gaillard, Mohamed Bouslama, Raphaël Sommet, Jean-Christophe Nallatamby
Format: Article
Language:English
Published: MDPI AG 2021-12-01
Series:Electronics
Subjects:
AlGaN/GaN HEMT
buffer traps
surface traps
<i>Y<sub>21</sub></i> and <i>Y<sub>22</sub></i> parameters
drain current transient
TCAD simulation
Online Access:https://www.mdpi.com/2079-9292/10/24/3096

Internet

https://www.mdpi.com/2079-9292/10/24/3096

Similar Items