Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline β-Ga2O3 thin film on SiC

Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline β-Ga2O3 thin film on SiC

The semiconductor, β-Ga2O3 is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap (∼4.9 eV) and large Baliga's figure of merit. However, the thermal conductivity of β-Ga2O3 is much lower than that of other wide/ultra-wide bandgap s...

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Bibliographic Details
Main Authors: Wenhui Xu, Tiangui You, Yibo Wang, Zhenghao Shen, Kang Liu, Lianghui Zhang, Huarui Sun, Ruijie Qian, Zhenghua An, Fengwen Mu, Tadatomo Suga, Genquan Han, Xin Ou, Yue Hao, Xi Wang
Format: Article
Language:English
Published: KeAi Communications Co. Ltd. 2021-11-01
Series:Fundamental Research
Subjects:
Thermal management
Heterogeneous integration
Wafer scale β-Ga2O3 on SiC
Ion-cutting technique
Schottky barrier diodes (SBDs)
Transient thermoreflectance (TTR) measurements
Online Access:http://www.sciencedirect.com/science/article/pii/S2667325821002156

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http://www.sciencedirect.com/science/article/pii/S2667325821002156

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