Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications

Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications

Metal-semiconductor-metal photodetectors (MSM PDs) are effective for monolithic integration with other optical components of the photonic circuits because of the planar fabrication technique. In this article, we present the design, growth, and characterization of GeSn MSM PDs that are suitable for p...

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Bibliographic Details
Main Authors: Soumava Ghosh, Kuan-Chih Lin, Cheng-Hsun Tsai, Harshvardhan Kumar, Qimiao Chen, Lin Zhang, Bongkwon Son, Chuan Seng Tan, Munho Kim, Bratati Mukhopadhyay, Guo-En Chang
Format: Article
Language:English
Published: MDPI AG 2020-08-01
Series:Micromachines
Subjects:
photodetectors
GeSn alloys
silicon photonics
photonic integrated circuits
Online Access:https://www.mdpi.com/2072-666X/11/9/795

Internet

https://www.mdpi.com/2072-666X/11/9/795

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