Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications
Metal-semiconductor-metal photodetectors (MSM PDs) are effective for monolithic integration with other optical components of the photonic circuits because of the planar fabrication technique. In this article, we present the design, growth, and characterization of GeSn MSM PDs that are suitable for p...
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| Format: | Article |
| Language: | English |
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MDPI AG
2020-08-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/11/9/795 |
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| author | Soumava Ghosh Kuan-Chih Lin Cheng-Hsun Tsai Harshvardhan Kumar Qimiao Chen Lin Zhang Bongkwon Son Chuan Seng Tan Munho Kim Bratati Mukhopadhyay Guo-En Chang |
| author_facet | Soumava Ghosh Kuan-Chih Lin Cheng-Hsun Tsai Harshvardhan Kumar Qimiao Chen Lin Zhang Bongkwon Son Chuan Seng Tan Munho Kim Bratati Mukhopadhyay Guo-En Chang |
| author_sort | Soumava Ghosh |
| collection | DOAJ |
| description | Metal-semiconductor-metal photodetectors (MSM PDs) are effective for monolithic integration with other optical components of the photonic circuits because of the planar fabrication technique. In this article, we present the design, growth, and characterization of GeSn MSM PDs that are suitable for photonic integrated circuits. The introduction of 4% Sn in the GeSn active region also reduces the direct bandgap and shows a redshift in the optical responsivity spectra, which can extend up to 1800 nm wavelength, which means it can cover the entire telecommunication bands. The spectral responsivity increases with an increase in bias voltage caused by the high electric field, which enhances the carrier generation rate and the carrier collection efficiency. Therefore, the GeSn MSM PDs can be a suitable device for a wide range of short-wave infrared (SWIR) applications. |
| first_indexed | 2024-03-10T17:00:30Z |
| format | Article |
| id | doaj.art-076c06f7b1934a2693e49d1ef2b7c35e |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T17:00:30Z |
| publishDate | 2020-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-076c06f7b1934a2693e49d1ef2b7c35e2023-11-20T10:58:44ZengMDPI AGMicromachines2072-666X2020-08-0111979510.3390/mi11090795Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared ApplicationsSoumava Ghosh0Kuan-Chih Lin1Cheng-Hsun Tsai2Harshvardhan Kumar3Qimiao Chen4Lin Zhang5Bongkwon Son6Chuan Seng Tan7Munho Kim8Bratati Mukhopadhyay9Guo-En Chang10Department of Mechanical Engineering, and Advanced Institute of Manufacturing with High-Tech Innovations (AIM-HI), National Chung Cheng University, Chiyai County 62102, TaiwanGraduate Institute of Opto-Mechatronics, National Chung Cheng University, Chiyai County 62102, TaiwanGraduate Institute of Opto-Mechatronics, National Chung Cheng University, Chiyai County 62102, TaiwanDepartment of Mechanical Engineering, and Advanced Institute of Manufacturing with High-Tech Innovations (AIM-HI), National Chung Cheng University, Chiyai County 62102, TaiwanSchool of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, SingaporeSchool of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, SingaporeSchool of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, SingaporeSchool of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, SingaporeSchool of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, SingaporeInstitute of Radio Physics and Electronics, University of Calcutta, Kolkata 700009, IndiaDepartment of Mechanical Engineering, and Advanced Institute of Manufacturing with High-Tech Innovations (AIM-HI), National Chung Cheng University, Chiyai County 62102, TaiwanMetal-semiconductor-metal photodetectors (MSM PDs) are effective for monolithic integration with other optical components of the photonic circuits because of the planar fabrication technique. In this article, we present the design, growth, and characterization of GeSn MSM PDs that are suitable for photonic integrated circuits. The introduction of 4% Sn in the GeSn active region also reduces the direct bandgap and shows a redshift in the optical responsivity spectra, which can extend up to 1800 nm wavelength, which means it can cover the entire telecommunication bands. The spectral responsivity increases with an increase in bias voltage caused by the high electric field, which enhances the carrier generation rate and the carrier collection efficiency. Therefore, the GeSn MSM PDs can be a suitable device for a wide range of short-wave infrared (SWIR) applications.https://www.mdpi.com/2072-666X/11/9/795photodetectorsGeSn alloyssilicon photonicsphotonic integrated circuits |
| spellingShingle | Soumava Ghosh Kuan-Chih Lin Cheng-Hsun Tsai Harshvardhan Kumar Qimiao Chen Lin Zhang Bongkwon Son Chuan Seng Tan Munho Kim Bratati Mukhopadhyay Guo-En Chang Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications Micromachines photodetectors GeSn alloys silicon photonics photonic integrated circuits |
| title | Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications |
| title_full | Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications |
| title_fullStr | Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications |
| title_full_unstemmed | Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications |
| title_short | Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications |
| title_sort | metal semiconductor metal gesn photodetectors on silicon for short wave infrared applications |
| topic | photodetectors GeSn alloys silicon photonics photonic integrated circuits |
| url | https://www.mdpi.com/2072-666X/11/9/795 |
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