Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors

Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors

We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) cap layer below the gate, enabling a positive threshold voltage higher than...

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Bibliographic Details
Main Authors: Idriss Abid, Youssef Hamdaoui, Jash Mehta, Joff Derluyn, Farid Medjdoub
Format: Article
Language:English
Published: MDPI AG 2022-09-01
Series:Micromachines
Subjects:
high-electron-mobility transistor (HEMT)
GaN
normally off
Online Access:https://www.mdpi.com/2072-666X/13/9/1519

Internet

https://www.mdpi.com/2072-666X/13/9/1519

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