Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes

Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes

Resistive random access memory (RRAM) is one of the most promising new nonvolatile memories because of its excellent properties. Moreover, due to fast read speed and low work voltage, it is suitable for seldom-write frequent-read applications. However, as technology nodes shrink, RRAM faces many iss...

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Bibliographic Details
Main Authors: Donglin Zhang, Bo Peng, Yulin Zhao, Zhongze Han, Qiao Hu, Xuanzhi Liu, Yongkang Han, Honghu Yang, Jinhui Cheng, Qingting Ding, Haijun Jiang, Jianguo Yang, Hangbing Lv
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Micromachines
Subjects:
RRAM
reference schemes
sensing schemes
BL-enhancing schemes
Online Access:https://www.mdpi.com/2072-666X/12/8/913

Internet

https://www.mdpi.com/2072-666X/12/8/913

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