Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes
Resistive random access memory (RRAM) is one of the most promising new nonvolatile memories because of its excellent properties. Moreover, due to fast read speed and low work voltage, it is suitable for seldom-write frequent-read applications. However, as technology nodes shrink, RRAM faces many iss...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-07-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/12/8/913 |
| _version_ | 1797522819807969280 |
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| author | Donglin Zhang Bo Peng Yulin Zhao Zhongze Han Qiao Hu Xuanzhi Liu Yongkang Han Honghu Yang Jinhui Cheng Qingting Ding Haijun Jiang Jianguo Yang Hangbing Lv |
| author_facet | Donglin Zhang Bo Peng Yulin Zhao Zhongze Han Qiao Hu Xuanzhi Liu Yongkang Han Honghu Yang Jinhui Cheng Qingting Ding Haijun Jiang Jianguo Yang Hangbing Lv |
| author_sort | Donglin Zhang |
| collection | DOAJ |
| description | Resistive random access memory (RRAM) is one of the most promising new nonvolatile memories because of its excellent properties. Moreover, due to fast read speed and low work voltage, it is suitable for seldom-write frequent-read applications. However, as technology nodes shrink, RRAM faces many issues, which can significantly degrade RRAM performance. Therefore, it is necessary to optimize the sensing schemes to improve the application range of RRAM. In this paper, the issues faced by RRAM in advanced technology nodes are summarized. Then, the advantages and weaknesses in the novel design and optimization methodologies of sensing schemes are introduced in detail from three aspects, the reference schemes, sensing amplifier schemes, and bit line (BL)-enhancing schemes, according to the development of technology in especially recent years, which can be the reference for designing the sensing schemes. Moreover, the waveforms and results of each method are illustrated to make the design easy to understand. With the development of technology, the sensing schemes of RRAM become higher speed and resolution, low power consumption, and are applied at advanced technology nodes and low working voltage. Now, the most advanced nodes the RRAM applied is 14 nm node, the lowest working voltage can reach 0.32 V, and the shortest access time can be only a few nanoseconds. |
| first_indexed | 2024-03-10T08:34:46Z |
| format | Article |
| id | doaj.art-0791061855f14b41b4be7315658220b4 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T08:34:46Z |
| publishDate | 2021-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-0791061855f14b41b4be7315658220b42023-11-22T08:43:57ZengMDPI AGMicromachines2072-666X2021-07-0112891310.3390/mi12080913Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology NodesDonglin Zhang0Bo Peng1Yulin Zhao2Zhongze Han3Qiao Hu4Xuanzhi Liu5Yongkang Han6Honghu Yang7Jinhui Cheng8Qingting Ding9Haijun Jiang10Jianguo Yang11Hangbing Lv12Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaZhejiang Lab, Hangzhou 311121, ChinaKey Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaZhejiang Lab, Hangzhou 311121, ChinaKey Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaZhejiang Lab, Hangzhou 311121, ChinaKey Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaResistive random access memory (RRAM) is one of the most promising new nonvolatile memories because of its excellent properties. Moreover, due to fast read speed and low work voltage, it is suitable for seldom-write frequent-read applications. However, as technology nodes shrink, RRAM faces many issues, which can significantly degrade RRAM performance. Therefore, it is necessary to optimize the sensing schemes to improve the application range of RRAM. In this paper, the issues faced by RRAM in advanced technology nodes are summarized. Then, the advantages and weaknesses in the novel design and optimization methodologies of sensing schemes are introduced in detail from three aspects, the reference schemes, sensing amplifier schemes, and bit line (BL)-enhancing schemes, according to the development of technology in especially recent years, which can be the reference for designing the sensing schemes. Moreover, the waveforms and results of each method are illustrated to make the design easy to understand. With the development of technology, the sensing schemes of RRAM become higher speed and resolution, low power consumption, and are applied at advanced technology nodes and low working voltage. Now, the most advanced nodes the RRAM applied is 14 nm node, the lowest working voltage can reach 0.32 V, and the shortest access time can be only a few nanoseconds.https://www.mdpi.com/2072-666X/12/8/913RRAMreference schemessensing schemesBL-enhancing schemes |
| spellingShingle | Donglin Zhang Bo Peng Yulin Zhao Zhongze Han Qiao Hu Xuanzhi Liu Yongkang Han Honghu Yang Jinhui Cheng Qingting Ding Haijun Jiang Jianguo Yang Hangbing Lv Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes Micromachines RRAM reference schemes sensing schemes BL-enhancing schemes |
| title | Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes |
| title_full | Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes |
| title_fullStr | Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes |
| title_full_unstemmed | Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes |
| title_short | Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes |
| title_sort | sensing circuit design techniques for rram in advanced cmos technology nodes |
| topic | RRAM reference schemes sensing schemes BL-enhancing schemes |
| url | https://www.mdpi.com/2072-666X/12/8/913 |
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