The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures
In this work, the influence of elevated temperatures on charge trapping in Si nanoclusters located in oxide layer of MOS structure has been comprehensively studied. The samples with one layer of nanocrystals in the oxide have been studied using the modular data acquisition setup for capacitance-volt...
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| Format: | Article |
| Language: | English |
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National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2016-04-01
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| Series: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
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| Online Access: | http://journal-spqeo.org.ua/n1_2016/P116-123abstr.html |