The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures
In this work, the influence of elevated temperatures on charge trapping in Si nanoclusters located in oxide layer of MOS structure has been comprehensively studied. The samples with one layer of nanocrystals in the oxide have been studied using the modular data acquisition setup for capacitance-volt...
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| Format: | Article |
| Language: | English |
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National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2016-04-01
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| Series: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
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| Online Access: | http://journal-spqeo.org.ua/n1_2016/P116-123abstr.html |
| _version_ | 1828411285193097216 |
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| author | V.A. Ievtukh |
| author_facet | V.A. Ievtukh |
| author_sort | V.A. Ievtukh |
| collection | DOAJ |
| description | In this work, the influence of elevated temperatures on charge trapping in Si nanoclusters located in oxide layer of MOS structure has been comprehensively studied. The samples with one layer of nanocrystals in the oxide have been studied using the modular data acquisition setup for capacitance-voltage measurements. The memory window formation and memory window retention experimental methods were used with the aim to study the trapping/emission processes inside the dielectric layer of MOS capacitor memory within the defined range of elevated temperatures. The trap activation energy and charge localization were determined from measured temperature dependences of charge retention. The electric field dependence of the activation energy with subsequent charge emission law have been determined. |
| first_indexed | 2024-12-10T12:27:25Z |
| format | Article |
| id | doaj.art-07943b6dba2744319616116967fc3ce1 |
| institution | Directory Open Access Journal |
| issn | 1560-8034 1605-6582 |
| language | English |
| last_indexed | 2024-12-10T12:27:25Z |
| publishDate | 2016-04-01 |
| publisher | National Academy of Sciences of Ukraine. Institute of Semi conductor physics. |
| record_format | Article |
| series | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| spelling | doaj.art-07943b6dba2744319616116967fc3ce12022-12-22T01:48:55ZengNational Academy of Sciences of Ukraine. Institute of Semi conductor physics.Semiconductor Physics, Quantum Electronics & Optoelectronics1560-80341605-65822016-04-0119111612310.15407/spqeo19.01.116The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperaturesV.A. Ievtukh0V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, UkraineIn this work, the influence of elevated temperatures on charge trapping in Si nanoclusters located in oxide layer of MOS structure has been comprehensively studied. The samples with one layer of nanocrystals in the oxide have been studied using the modular data acquisition setup for capacitance-voltage measurements. The memory window formation and memory window retention experimental methods were used with the aim to study the trapping/emission processes inside the dielectric layer of MOS capacitor memory within the defined range of elevated temperatures. The trap activation energy and charge localization were determined from measured temperature dependences of charge retention. The electric field dependence of the activation energy with subsequent charge emission law have been determined.http://journal-spqeo.org.ua/n1_2016/P116-123abstr.htmlnanocrystalline memorymos capacitorcharge trappingelevated temperatures |
| spellingShingle | V.A. Ievtukh The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures Semiconductor Physics, Quantum Electronics & Optoelectronics nanocrystalline memory mos capacitor charge trapping elevated temperatures |
| title | The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures |
| title_full | The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures |
| title_fullStr | The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures |
| title_full_unstemmed | The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures |
| title_short | The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures |
| title_sort | charge trapping emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures |
| topic | nanocrystalline memory mos capacitor charge trapping elevated temperatures |
| url | http://journal-spqeo.org.ua/n1_2016/P116-123abstr.html |
| work_keys_str_mv | AT vaievtukh thechargetrappingemissionprocessesinsiliconnanocrystallinenonvolatilememoryassistedbyelectricfieldandelevatedtemperatures AT vaievtukh chargetrappingemissionprocessesinsiliconnanocrystallinenonvolatilememoryassistedbyelectricfieldandelevatedtemperatures |