Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm

With the rapid development of photo-communication technologies, avalanche photodiode (APD) will play an increasingly important role in the future due to its high quantum efficiency, low power consumption, and small size. The monolithic integration of optical components and signal processing electron...

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Bibliographic Details
Main Authors: Hewei Zhang, Yang Tian, Qian Li, Wenqiang Ding, Xuzhen Yu, Zebiao Lin, Xuyang Feng, Yanli Zhao
Format: Article
Language:English
Published: MDPI AG 2022-10-01
Series:Sensors
Subjects:
Online Access:https://www.mdpi.com/1424-8220/22/20/7724