Stress Buildup Upon Crystallization of GeTe Thin Films: Curvature Measurements and Modelling

Stress Buildup Upon Crystallization of GeTe Thin Films: Curvature Measurements and Modelling

Phase change materials are attractive materials for non-volatile memories because of their ability to switch reversibly between an amorphous and a crystal phase. The volume change upon crystallization induces mechanical stress that needs to be understood and controlled. In this work, we monitor stre...

Full description

Bibliographic Details
Main Authors: Rajkiran Tholapi, Manon Gallard, Nelly Burle, Christophe Guichet, Stephanie Escoubas, Magali Putero, Cristian Mocuta, Marie-Ingrid Richard, Rebecca Chahine, Chiara Sabbione, Mathieu Bernard, Leila Fellouh, Pierre Noé, Olivier Thomas
Format: Article
Language:English
Published: MDPI AG 2020-06-01
Series:Nanomaterials
Subjects:
phase-change materials
wafer curvature
GeTe
stress
crystallization
Online Access:https://www.mdpi.com/2079-4991/10/6/1247

Internet

https://www.mdpi.com/2079-4991/10/6/1247

Similar Items